QH8MB5TCR

Specifications

Current Continuous Drain Id25

4.5A (Ta), 5A (Ta)

Id Continuous Drain Current

4.5 A, 5 A

Package Type

TSMT-8

Rise Time

4.4 ns

Ürün Tipi

MOSFET

Rds On Max Id Vgs

44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Transistor Polarity

N and P Channel

Pin Sayısı

8

Continuous Drain Current Id

4.5A

Tedarikçi Cihaz Paketi

TSMT8

Qg Gate Charge

17.2 nC

Maks. Çalışma Sıcaklığı

+ 150 C

Vgs Gatesource Voltage

- 20 V, + 20 V

Çalışma Sıcaklığı

150°C (TJ)

Kılıf / Paket

8-SMD, Flat Lead

Input Capacitance Ciss Max Vds

150pF @ 20V, 920pF @ 20V

Vgs Th Gatesource Threshold Voltage

2.5 V

Channel Type

N and P Channel

Gate Charge Qg Max Vgs

3.5nC @ 10V, 17.2nC @ 10V

Number Of Channels

2 Channel

Ambalaj

Cut Tape

Montaj Stili

SMD/SMT

Fabrika Paket Adedi

3000

Vgsth Max Id

2.5V @ 1mA

Drain To Source Voltage Vdss

40V

Number Of Elements Per Chip

2

Typical Turnon Delay Time

5 ns

RoHS

Details

Typical Turnoff Delay Time

11 ns

Montaj Tipi

Surface Mount

Fet Type

N and P-Channel

Technology

Si

Ürün Durumu

Active

Configuration

Dual

Vds Drainsource Breakdown Voltage

40 V

Power Max

1.1W (Ta)

Pd Power Dissipation

1.5 W

Rds On Drainsource Resistance

44 mOhms, 41 mOhms