Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 1.5W
- Montaj Tipi
- Surface Mount
- Fet Type
- N and P-Channel
- Avalanche Energy Rating Eas
- 3.5 mJ
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Fet Feature
- Standard
- Fabrika Tedarik Süresi
- 20 Weeks
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 0.016Ohm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Operating Mode
- ENHANCEMENT MODE
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Pin Sayısı
- 2
- Continuous Drain Current Id
- 8A
- Montaj
- Surface Mount
- Rds On Max Id Vgs
- 16m Ω @ 9A, 10V
- Current Continuous Drain Id25
- 9A 8A
- Transistor Application
- SWITCHING
- Ds Breakdown Voltagemin
- 30V
- Vgsth Max Id
- 2.5V @ 1mA
- Drain To Source Voltage Vdss
- 30V
- Yayın Yılı
- 2015
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- Ambalaj
- Cut Tape (CT)
- Terminal Pozisyonu
- DUAL
- Jesd30 Code
- R-PDSO-F8
- Input Capacitance Ciss Max Vds
- 640pF @ 15V
- Gate Charge Qg Max Vgs
- 15.5nC @ 10V
- Çalışma Sıcaklığı
- 150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 8-SMD, Flat Lead
- Terminal Sayısı
- 8
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