QH8MA3TCR

Specifications

Vgsth Max Id

2.5V @ 1mA

Drain To Source Voltage Vdss

30V

Yayın Yılı

2015

Terminal Pozisyonu

DUAL

Ambalaj

Cut Tape (CT)

Number Of Elements

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PDSO-F8

Input Capacitance Ciss Max Vds

300pF @ 15V

Gate Charge Qg Max Vgs

7.2nC @ 10V

Çalışma Sıcaklığı

150°C TJ

Kılıf / Paket

8-SMD, Flat Lead

Terminal Sayısı

8

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

18A

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Continuous Drain Current Id

5.5A

Transistor Application

SWITCHING

Current Continuous Drain Id25

7A 5.5A

Rds On Max Id Vgs

29m Ω @ 7A, 10V

Montaj

Surface Mount

Ds Breakdown Voltagemin

30V

Fet Feature

Standard

Fabrika Tedarik Süresi

20 Weeks

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.029Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Max Power Dissipation

1.5W

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

1.8 mJ

Fet Type

N and P-Channel

Transistor Element Material

SILICON

Parça Durumu

Active