QH8MA2TCR

Specifications

Max Power Dissipation

1.25W

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

1.5 mJ

Fet Type

N and P-Channel

Parça Durumu

Active

Transistor Element Material

SILICON

Fet Feature

Logic Level Gate

Fabrika Tedarik Süresi

20 Weeks

Drainsource On Resistancemax

0.0056Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

4.5A

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

3A

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Pulsed Drain Currentmax Idm

12A

Current Continuous Drain Id25

4.5A 3A

Rds On Max Id Vgs

35m Ω @ 4.5A, 10V

Montaj

Surface Mount

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

30V

Kurşunsuz Kodu

yes

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.5V @ 1mA

Yayın Yılı

2014

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

Ambalaj

Cut Tape (CT)

Number Of Elements

2

Jesd30 Code

R-PDSO-F8

Input Capacitance Ciss Max Vds

365pF @ 10V

Gate Charge Qg Max Vgs

8.4nC @ 10V

Çalışma Sıcaklığı

150°C TJ

Terminal Sayısı

8

Kılıf / Paket

8-SMD, Flat Lead

RoHS Durumu

ROHS3 Compliant