QH8M22TCR

Specifications

Transistor Application

SWITCHING

Rds On Max Id Vgs

46m Ω @ 4.5A, 10V, 190m Ω @ 2A, 10V

Current Continuous Drain Id25

4.5A Ta 2A Ta

Ds Breakdown Voltagemin

40V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

18A

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

4.5A

Çalışma Sıcaklığı

150°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SMD, Flat Lead

Terminal Sayısı

8

Input Capacitance Ciss Max Vds

193pF 450pF @ 20V

Gate Charge Qg Max Vgs

2.6nC, 9.5nC @ 10V

Number Of Elements

2

Ambalaj

Cut Tape (CT)

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PDSO-F8

Drain To Source Voltage Vdss

40V

Vgsth Max Id

2.5V @ 10μA, 3V @ 1mA

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Active

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

1.6 mJ

Fet Type

N and P-Channel

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.059Ohm

Fabrika Tedarik Süresi

16 Weeks

Power Max

1.1W Ta

Fet Feature

Standard