QH8KC6TCR

Specifications

Tedarikçi Cihaz Paketi

TSMT8

Continuous Drain Current Id

5.5A

Pin Sayısı

8

Transistor Polarity

N Channel

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Package Type

TSMT-8

Rds On Max Id Vgs

30mOhm @ 5.5A, 10V

Rise Time

5.6 ns

Ürün Tipi

MOSFET

Id Continuous Drain Current

5.5 A

Current Continuous Drain Id25

5.5A (Ta)

Vgs Gatesource Voltage

- 20 V, + 20 V

Maks. Çalışma Sıcaklığı

+ 150 C

Qg Gate Charge

7.6 nC

Number Of Channels

2 Channel

Gate Charge Qg Max Vgs

7.6nC @ 10V

Channel Type

N Channel

Vgs Th Gatesource Threshold Voltage

2.5 V

Input Capacitance Ciss Max Vds

460pF @ 30V

Kılıf / Paket

8-SMD, Flat Lead

Çalışma Sıcaklığı

150°C (TJ)

Typical Turnon Delay Time

8.7 ns

Number Of Elements Per Chip

2

Fabrika Paket Adedi

3000

Vgsth Max Id

2.5V @ 1mA

Drain To Source Voltage Vdss

60V

Montaj Stili

SMD/SMT

Ambalaj

Cut Tape

Typical Turnoff Delay Time

21 ns

RoHS

Details

Technology

Si

Fet Type

2 N-Channel (Dual)

Montaj Tipi

Surface Mount

Vds Drainsource Breakdown Voltage

60 V

Configuration

Dual

Ürün Durumu

Active

Fet Feature

Standard

Rds On Drainsource Resistance

30 mOhms

Pd Power Dissipation

1.5 W