QH8KA3TCR

Specifications

RoHS

Details

Msl

MSL 1 - Unlimited

Typical Turnoff Delay Time

33 ns

Fet Type

2 N-Channel (Dual)

Montaj Tipi

Surface Mount

Configuration

Dual

Continuous Drain Current

9(A)

Rad Hardened

No

Rds On Drainsource Resistance

16 mOhms

Pd Power Dissipation

2.6 W

Transistor Polarity

N Channel

Channel Mode

Enhancement

Minimum Operating Temperature

- 55 C

Id Continuous Drain Current

9 A

Current Continuous Drain Id25

9A (Ta)

Rds On Max Id Vgs

16mOhm @ 9A, 10V

Pin Sayısı

8

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

8-SMD, Flat Lead

Number Of Channels

2 Channel

Gate Charge Qg Max Vgs

15.5nC @ 10V

Channel Type

N Channel

Ambalaj

Tape and Reel

Number Of Elements

2

Tip

Small Signal

Vgsth Max Id

2.5V @ 1mA

Polarity

N

Operating Temp Range

-55C to 150C

Technology

Si

Drainsource Onvolt

30(V)

Gatesource Voltage Max

±20(V)

Mounting

Surface Mount

Ürün Durumu

Active

Power Dissipation

2.6(W)

Vds Drainsource Breakdown Voltage

30 V

Power Max

1.5W (Ta)

Fet Feature

Standard

Ürün Tipi

MOSFET

Rise Time

19 ns

Package Type

TSMT