Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 20 Weeks
- Power Max
- 2.4W
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 0.073Ohm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Avalanche Energy Rating Eas
- 0.65 mJ
- Fet Type
- 2 N-Channel (Dual)
- Yüzey Montaj
- YES
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 30V
- Vgsth Max Id
- 2.5V @ 1mA
- Yayın Yılı
- 2015
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Cut Tape (CT)
- Number Of Elements
- 2
- Jesd30 Code
- R-PDSO-F8
- REACH Uyumluluk Kodu
- not_compliant
- Input Capacitance Ciss Max Vds
- 125pf @ 15V
- Gate Charge Qg Max Vgs
- 3nC @ 10V
- Çalışma Sıcaklığı
- 150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 8-SMD, Flat Lead
- Terminal Sayısı
- 8
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 12A
- Rds On Max Id Vgs
- 73m Ω @ 4.5A, 10V
- Current Continuous Drain Id25
- 4.5A
- Transistor Application
- SWITCHING
- Ds Breakdown Voltagemin
- 30V
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