QH8K22TCR

Specifications

Parça Durumu

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Fet Type

2 N-Channel (Dual)

Avalanche Energy Rating Eas

1.6 mJ

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.046Ohm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Feature

Standard

Fabrika Tedarik Süresi

16 Weeks

Power Max

1.1W Ta

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

18A

Rds On Max Id Vgs

46m Ω @ 6.5A, 10V

Current Continuous Drain Id25

6.5A Ta

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

40V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

195pF @ 20V

Gate Charge Qg Max Vgs

2.6nC @ 10V

Çalışma Sıcaklığı

150°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SMD, Flat Lead

Terminal Sayısı

8

Drain To Source Voltage Vdss

40V

Vgsth Max Id

2.5V @ 10μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Number Of Elements

2

Jesd30 Code

R-PDSO-F8