QH8JC5TCR

Specifications

Configuration

Dual

Rds On Drainsource Resistance

91 mOhms

Pd Power Dissipation

1.5 W

RoHS

Details

Typical Turnoff Delay Time

82 ns

Fet Type

2 P-Channel (Dual)

Birim Ağırlık

0.000353 oz

Montaj Tipi

Surface Mount

Kılıf / Paket

TSMT-8

Number Of Channels

2 Channel

Gate Charge Qg Max Vgs

17.3nC @ 10V

Channel Type

P

Ambalaj

Cut Tape

Vgsth Max Id

2.5V @ 1mA

Transistor Polarity

P Channel

Paket

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Rds On Max Id Vgs

91mOhm @ 3.5A, 10V

Current Continuous Drain Id25

3.5A (Ta)

Id Continuous Drain Current

3.5 A

Pin Sayısı

8

Transistor Type

2 P - Channel

Vgs Gatesource Voltage

- 10 V, + 10 V

Ürün Durumu

Active

Vds Drainsource Breakdown Voltage

60 V

Power Max

1.1W (Ta)

Fet Feature

Standard

Technology

Si

Çalışma Sıcaklığı

150°C (TJ)

Vgs Th Gatesource Threshold Voltage

1 V

Input Capacitance Ciss Max Vds

850pF @ 30V

Typical Turnon Delay Time

9.2 ns

Number Of Elements Per Chip

2

Drain To Source Voltage Vdss

60V

Fabrika Paket Adedi

3000

Montaj Stili

SMD/SMT

Package Type

TSMT-8

Rise Time

10 ns

Ürün Tipi

MOSFET