Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 20 Weeks
- Power Max
- 1.5W
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Drainsource On Resistancemax
- 0.048Ohm
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- ECCN Kodu
- EAR99
- Avalanche Energy Rating Eas
- 8.9 mJ
- Fet Type
- 2 P-Channel (Dual)
- Montaj Tipi
- Surface Mount
- Yüzey Montaj
- YES
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Jesd30 Code
- R-PDSO-F8
- REACH Uyumluluk Kodu
- not_compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- Ambalaj
- Cut Tape (CT)
- Drain To Source Voltage Vdss
- 30V
- Vgsth Max Id
- 1.2V @ 1mA
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 8
- Kılıf / Paket
- 8-SMD, Flat Lead
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge Qg Max Vgs
- 10.2nC @ 4.5V
- Input Capacitance Ciss Max Vds
- 720pF @ 10V
- Drain Currentmax Abs Id
- 5A
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Ds Breakdown Voltagemin
- 20V
- Rds On Max Id Vgs
- 38m Ω @ 5A, 4.5V
- Current Continuous Drain Id25
- 5A
- Transistor Application
- SWITCHING
- Pulsed Drain Currentmax Idm
- 18A
- Operating Mode
- ENHANCEMENT MODE
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