Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2011
- Terminal Pozisyonu
- DUAL
- Drain To Source Voltage Vdss
- 30V
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 2W
- Case Connection
- DRAIN
- Terminal Sayısı
- 6
- Number Of Elements
- 2
- Input Capacitance Ciss Max Vds
- 250pF @ 10V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Jesd30 Code
- R-PDSO-F6
- Parça Durumu
- Obsolete
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pulsed Drain Currentmax Idm
- 12A
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Continuous Drain Current Id
- 5A
- Çalışma Sıcaklığı
- 150°C TJ
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Ds Breakdown Voltagemin
- 30V
- Temel Parça No
- *M12
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 0.063Ohm
- Fet Type
- N and P-Channel
- RoHS Durumu
- ROHS3 Compliant
- Drain Currentmax Abs Id
- 5A
- Ambalaj
- Tape & Reel (TR)
- Gate Charge Qg Max Vgs
- 4nC @ 5V
- Transistor Element Material
- SILICON
- Vgsth Max Id
- 2.5V @ 1mA
- Fet Feature
- Logic Level Gate
- Kılıf / Paket
- 6-SMD, Flat Leads
- Power Max
- 2W
- Rds On Max Id Vgs
- 42m Ω @ 5A, 10V
- Montaj
- Surface Mount
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