MP6M12TCR

Specifications

Yayın Yılı

2011

Terminal Pozisyonu

DUAL

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Max Power Dissipation

2W

Case Connection

DRAIN

Terminal Sayısı

6

Number Of Elements

2

Input Capacitance Ciss Max Vds

250pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-PDSO-F6

Parça Durumu

Obsolete

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

12A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Continuous Drain Current Id

5A

Çalışma Sıcaklığı

150°C TJ

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ds Breakdown Voltagemin

30V

Temel Parça No

*M12

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.063Ohm

Fet Type

N and P-Channel

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

5A

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

4nC @ 5V

Transistor Element Material

SILICON

Vgsth Max Id

2.5V @ 1mA

Fet Feature

Logic Level Gate

Kılıf / Paket

6-SMD, Flat Leads

Power Max

2W

Rds On Max Id Vgs

42m Ω @ 5A, 10V

Montaj

Surface Mount