MP6M11TCR

Specifications

RoHS Durumu

ROHS3 Compliant

Fet Type

N and P-Channel

Drainsource On Resistancemax

0.14Ohm

ECCN Kodu

EAR99

Rds On Max Id Vgs

98m Ω @ 3.5A, 10V

Montaj

Surface Mount

Power Max

2W

Fet Feature

Logic Level Gate

Vgsth Max Id

2.5V @ 1mA

Kılıf / Paket

6-SMD, Flat Leads

Gate Charge Qg Max Vgs

1.9nC @ 5V

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Input Capacitance Ciss Max Vds

85pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-PDSO-F6

Terminal Sayısı

6

Case Connection

DRAIN

Drain To Source Voltage Vdss

30V

REACH Uyumluluk Kodu

unknown

Max Power Dissipation

2W

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Yayın Yılı

2011

Ds Breakdown Voltagemin

30V

Temel Parça No

*M11

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Çalışma Sıcaklığı

150°C TJ

Continuous Drain Current Id

3.5A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

12A