MP6K31TR

Specifications

Transistor Application

SWITCHING

Max Power Dissipation

2W

Drain To Source Voltage Vdss

60V

Yayın Yılı

2010

Terminal Sayısı

6

Element Configuration

Dual

Case Connection

DRAIN

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Obsolete

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

110pF @ 10V

Number Of Elements

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

10

Drain To Source Breakdown Voltage

60V

Pulsed Drain Currentmax Idm

8A

Continuous Drain Current Id

2A

Montaj Tipi

Surface Mount

Pin Sayısı

6

Çalışma Sıcaklığı

150°C TJ

Temel Parça No

*K31

JESD-609 Kodu

e2

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.35Ohm

Pin Sayısı

6

Fet Type

2 N-Channel (Dual)

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

2A

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

2nC @ 5V

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

6-SMD, Flat Leads

Fet Feature

Logic Level Gate

Vgsth Max Id

2.5V @ 1mA

Terminal Kaplaması

TIN COPPER

Power Dissipation

2W

Rds On Max Id Vgs

290m Ω @ 2A, 10V

Montaj

Surface Mount