MP6K11TCR

Specifications

Pin Sayısı

6

Çalışma Sıcaklığı

150°C TJ

Ds Breakdown Voltagemin

30V

Temel Parça No

*K11

Pulsed Drain Currentmax Idm

12A

Continuous Drain Current Id

3.5A

Montaj Tipi

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Obsolete

Input Capacitance Ciss Max Vds

85pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-PDSO-F6

Number Of Elements

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

10

Max Power Dissipation

2W

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

30V

Yayın Yılı

2011

Terminal Sayısı

6

Case Connection

DRAIN

Power Max

2W

Terminal Kaplaması

TIN COPPER

Rds On Max Id Vgs

98m Ω @ 3.5A, 10V

Montaj

Surface Mount

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

1.9nC @ 5V

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

6-SMD, Flat Leads

Fet Feature

Logic Level Gate

Vgsth Max Id

2.5V @ 1mA

Fet Type

2 N-Channel (Dual)

RoHS Durumu

ROHS3 Compliant

JESD-609 Kodu

e2

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.14Ohm