Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Continuous Collector Current
- 150mA
- Terminal Sayısı
- 6
- Collectoremitter Breakdown Voltage
- 50V
- Terminal Formu
- GULL WING
- Vce Saturation Max Ib Ic
- 400mV @ 5mA, 50mA
- Polarity
- NPN
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Application
- AMPLIFIER
- Çalışma Sıcaklığı
- 150°C TJ
- ECCN Kodu
- EAR99
- Voltage Rated Dc
- 50V
- Collector Emitter Voltage Vceo
- 50V
- Transition Frequency
- 180MHz
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 1mA 6V
- Element Configuration
- Dual
- Kurşunsuz Kodu
- yes
- Ambalaj
- Tape & Reel (TR)
- Transistor Type
- 2 NPN (Dual)
- Terminal Kaplaması
- TIN SILVER COPPER
- JESD-609 Kodu
- e1
- Radyasyon Dayanımı
- No
- Current Collector Cutoff Max
- 100nA ICBO
- Max Breakdown Voltage
- 50V
- Yayın Yılı
- 2004
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- 10
- Emitter Base Voltage Vebo
- 7V
- Parça Durumu
- Not For New Designs
- Gain Bandwidth Product
- 180MHz
- Jesd30 Code
- R-PDSO-G6
- Akım Değeri
- 150mA
- Montaj
- Surface Mount
- Collector Base Voltage Vcbo
- 60V
- HTS Kodu
- 8541.21.00.75
- Number Of Elements
- 2
- Max Collector Current
- 150mA
- Vcesatmax
- 0.4 V
- Pin Sayısı
- 74
- RoHS Durumu
- ROHS3 Compliant
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