Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 6
- Collectoremitter Breakdown Voltage
- 50V
- Transistor Application
- AMPLIFIER
- Çalışma Sıcaklığı
- 150°C TJ
- ECCN Kodu
- EAR99
- Tepe Reflow Sıcaklığı (°C)
- 260
- Polarity
- PNP
- Terminal Formu
- GULL WING
- Vce Saturation Max Ib Ic
- 500mV @ 5mA, 50mA
- Transition Frequency
- 140MHz
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 1mA 6V
- Collector Emitter Voltage Vceo
- 500mV
- Transistor Type
- 2 PNP (Dual)
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Dual
- Kurşunsuz Kodu
- yes
- Radyasyon Dayanımı
- No
- Collectoremitter Saturation Voltage
- -500mV
- Current Collector Cutoff Max
- 100nA ICBO
- JESD-609 Kodu
- e1
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- 10
- Yayın Yılı
- 2008
- Max Breakdown Voltage
- 50V
- Montaj
- Surface Mount
- Gain Bandwidth Product
- 140MHz
- Parça Durumu
- Not For New Designs
- Emitter Base Voltage Vebo
- -6V
- Power Max
- 300mW
- Number Of Elements
- 2
- HTS Kodu
- 8541.21.00.75
- Fabrika Tedarik Süresi
- 10 Weeks
- Collector Base Voltage Vcbo
- -60V
- RoHS Durumu
- ROHS3 Compliant
- Vcesatmax
- 0.5 V
- Pin Sayısı
- 6
- Max Collector Current
- 150mA
- Max Power Dissipation
- 300mW
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