IMN11T110

Specifications

Average Rectified Current

100mA

Kurşunsuz

Lead Free

Montaj

Surface Mount

Diode Type

Standard

Radyasyon Dayanımı

No

Recovery Time

4 ns

Voltage Forward Vf Max If

1.2V @ 100mA

Thickness

558.8μm

Max Forward Surge Current Ifsm

300mA

Terminal Kaplaması

TIN SILVER COPPER

Yayın Yılı

2005

Reverse Recovery Time

4 ns

Terminal Sayısı

6

Yükseklik

1.1mm

Kurşunsuz Kodu

yes

Tolerans

1%

Peak Reverse Current

100nA

Parça Durumu

Not For New Designs

Element Configuration

Common Cathode

Uzunluk

990.6μm

Tepe Reflow Sıcaklığı (°C)

260

RoHS Durumu

ROHS3 Compliant

Operating Temperature Junction

150°C Max

Fabrika Tedarik Süresi

10 Weeks

Max Reverse Leakage Current

100nA

Forward Voltage

1.2V

Number Of Elements

4

Tepe Reflow Süresi (maks. sn)

10

Current Reverse Leakage Vr

100nA @ 70V

JESD-609 Kodu

e1

Terminal Formu

GULL WING

Kapasitans

100pF

Pin Sayısı

6

Temel Parça No

MN11

Max Repetitive Reverse Voltage Vrrm

80V

Diode Element Material

SILICON

Output Current

100mA

HTS Kodu

8541.10.00.70

Voltage Rated Dc

80V

Max Surge Current

4A