HS8MA2TCR1

Specifications

Pd Power Dissipation

4 W

Typical Turnoff Delay Time

12 ns, 27.6 ns

Qg Gate Charge

7.8 nC, 8.4 nC

Vgs Th Gatesource Threshold Voltage

2.5 V

Vgs Gatesource Voltage

- 20 V, + 20 V

Montaj Tipi

Surface Mount

Rise Time

8 ns, 16.8 ns

Package Type

DFN3333-9DC

Rds On Max Id Vgs

80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V

Number Of Channels

2 Channel

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Input Capacitance Ciss Max Vds

320pF @ 10V, 365pF @ 10V

Number Of Elements Per Chip

2

Typical Turnon Delay Time

7.2 ns, 7.9 ns

Vgsth Max Id

2.5V @ 1mA

Çalışma Sıcaklığı

150°C (TJ)

Continuous Drain Current Id

7A

Maks. Çalışma Sıcaklığı

+ 150 C

Tedarikçi Cihaz Paketi

DFN3333-9DC

Drain To Source Voltage Vdss

30V

Rds On Drainsource Resistance

35 mOhms, 80 mOhms

Fet Type

N and P-Channel

Technology

Si

Fet Feature

Standard

Ambalaj

Cut Tape

Paket

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Vds Drainsource Breakdown Voltage

30 V

Kılıf / Paket

HSML3333L-9

Transistor Type

Power MOSFET

Power Max

2W (Ta)

Id Continuous Drain Current

5.5 A, 7 A

Configuration

Dual

Ürün Tipi

MOSFET

Ürün Durumu

Active

Transistor Polarity

N and P Channel

Gate Charge Qg Max Vgs

7.8nC @ 10V, 8.4nC @ 10V

RoHS

Details

Fabrika Paket Adedi

1000

Channel Type

N, P