HS8K11TB

Specifications

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

17.9m Ω @ 7A, 10V

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Pulsed Drain Currentmax Idm

28A

Terminal Formu

NO LEAD

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

150°C TJ

Vgsth Max Id

2.5V @ 1mA

Transistor Element Material

SILICON

Terminal Sayısı

8

Case Connection

DRAIN SOURCE

Jesd30 Code

S-PDSO-N8

Montaj

Surface Mount

Continuous Drain Current Id

11A

Input Capacitance Ciss Max Vds

500pF @ 15V

REACH Uyumluluk Kodu

not_compliant

Avalanche Energy Rating Eas

3.6 mJ

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

8-UDFN Exposed Pad

Ds Breakdown Voltagemin

30V

Fabrika Tedarik Süresi

20 Weeks

Drain Currentmax Abs Id

7A

Operating Mode

ENHANCEMENT MODE

Fet Type

2 N-Channel (Dual)

Drain To Source Voltage Vdss

30V

Fet Feature

Logic Level Gate

Ambalaj

Cut Tape (CT)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

11.1nC @ 10V

Drainsource On Resistancemax

0.0291Ohm

Current Continuous Drain Id25

7A 11A

ECCN Kodu

EAR99

Configuration

COMPLEX

RoHS Durumu

ROHS3 Compliant

Max Power Dissipation

2W

Yayın Yılı

2015