HP8S36TB

Specifications

Rds On Max Id Vgs

2.4m Ω @ 32A, 10V

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0133Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

12A

Ambalaj

Cut Tape (CT)

Avalanche Energy Rating Eas

5.3 mJ

Case Connection

DRAIN SOURCE

Terminal Formu

FLAT

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Type

2 N-Channel (Half Bridge)

Kılıf / Paket

8-PowerTDFN

Yüzey Montaj

YES

Vgsth Max Id

2.5V @ 1mA

Pulsed Drain Currentmax Idm

48A

Input Capacitance Ciss Max Vds

6100pF @ 15V

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Sayısı

6

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

30V

Power Max

29W

Ds Breakdown Voltagemin

30V

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PDSO-F6

Gate Charge Qg Max Vgs

47nC @ 4.5V

Fabrika Tedarik Süresi

20 Weeks

Number Of Elements

2

Current Continuous Drain Id25

27A 80A

Parça Durumu

Active