HP8MA2TB1

Specifications

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Case Connection

DRAIN

Fet Feature

Standard

Avalanche Energy Rating Eas

11 mJ

Terminal Formu

FLAT

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Cut Tape (CT)

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0165Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

9.6m Ω @ 18A, 10V, 17.9m Ω @ 15A, 10V

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Active

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

22nC, 25nC @ 10V

Jesd30 Code

R-PDSO-F6

Number Of Elements

2

Current Continuous Drain Id25

18A Ta 15A Ta

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

REACH Uyumluluk Kodu

not_compliant

Ds Breakdown Voltagemin

30V

Power Max

3W Ta

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

6

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

1100pF 1250pF @ 15V

Çalışma Sıcaklığı

150°C TJ

Vgsth Max Id

2.5V @ 1mA

Pulsed Drain Currentmax Idm

48A

Fet Type

N and P-Channel

Kılıf / Paket

8-PowerTDFN

Yüzey Montaj

YES