Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 2.5V @ 10mA
- Fet Type
- 2 N-Channel (Dual)
- Kılıf / Paket
- 8-PowerTDFN
- Drain To Source Voltage Vdss
- 30V
- Max Power Dissipation
- 3W
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 8
- Çalışma Sıcaklığı
- 150°C TJ
- Input Capacitance Ciss Max Vds
- 2550pF @ 15V
- REACH Uyumluluk Kodu
- not_compliant
- Ds Breakdown Voltagemin
- 30V
- Power Max
- 3W
- Parça Durumu
- Active
- Number Of Elements
- 2
- Fabrika Tedarik Süresi
- 20 Weeks
- Gate Charge Qg Max Vgs
- 24nC @ 4.5V
- ECCN Kodu
- EAR99
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 5m Ω @ 14A, 10V
- Ambalaj
- Cut Tape (CT)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Montaj Tipi
- Surface Mount
- Yayın Yılı
- 2015
- RoHS Durumu
- ROHS3 Compliant
- Drainsource On Resistancemax
- 0.007Ohm
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Case Connection
- DRAIN
- Fet Feature
- Logic Level Gate
- Terminal Formu
- FLAT
- Continuous Drain Current Id
- 14A
- Montaj
- Surface Mount
- Configuration
- COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- Pin Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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