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EMX1T2R

ROHM Semiconductor

EMX1T2R

Arrays BJT Transistors

In StockRoHS: Compliant

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Specifications

Tepe Reflow Sıcaklığı (°C)
260
Transition Frequency
180MHz
Polarity
NPN
Max Power Dissipation
150mW
Continuous Collector Current
150mA
Montaj
Surface Mount
Çalışma Sıcaklığı
150°C TJ
Emitter Base Voltage Vebo
7V
Max Collector Current
150mA
Reach Svhc
No SVHC
Parça Durumu
Active
Number Of Elements
2
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Surface Mount
Kurşunsuz
Lead Free
Max Breakdown Voltage
50V
Temel Parça No
*MX1
Voltage Rated Dc
50V
Pin Sayısı
6
Current Collector Cutoff Max
100nA ICBO
Akım Değeri
150mA
Element Configuration
Dual
Terminal Sayısı
6
Gain Bandwidth Product
180MHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
Vce Saturation Max Ib Ic
400mV @ 5mA, 50mA
Kurşunsuz Kodu
yes
Dc Current Gain Hfe Min Ic Vce
120 @ 1mA 6V
Ambalaj
Tape & Reel (TR)
Tepe Reflow Süresi (maks. sn)
10
Yayın Yılı
2003
Power Dissipation
150mW
JESD-609 Kodu
e2
Pin Sayısı
6
Fabrika Tedarik Süresi
13 Weeks
Hfemin
120
Transistor Element Material
SILICON
Terminal Formu
FLAT
Frekans
180MHz
Terminal Kaplaması
Tin/Copper (Sn/Cu)

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