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EMT2T2R

ROHM Semiconductor

EMT2T2R

Arrays BJT Transistors

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Specifications

Power Dissipation
150mW
Yayın Yılı
2004
Tepe Reflow Süresi (maks. sn)
10
Ambalaj
Tape & Reel (TR)
Dc Current Gain Hfe Min Ic Vce
120 @ 1mA 6V
JESD-609 Kodu
e2
Pin Sayısı
6
Gain Bandwidth Product
140MHz
Vce Saturation Max Ib Ic
500mV @ 5mA, 50mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kurşunsuz Kodu
yes
Element Configuration
Dual
Terminal Sayısı
6
Max Output Current
150mA
Pin Sayısı
6
Akım Değeri
-150mA
Current Collector Cutoff Max
100nA ICBO
Radyasyon Dayanımı
No
HTS Kodu
8541.21.00.75
Collector Emitter Voltage Vceo
500mV
Collectoremitter Breakdown Voltage
50V
Transistor Type
2 PNP (Dual)
ECCN Kodu
EAR99
Terminal Kaplaması
Tin/Copper (Sn/Cu)
Collector Base Voltage Vcbo
60V
Kılıf / Paket
SOT-563, SOT-666
Fabrika Tedarik Süresi
10 Weeks
Terminal Formu
FLAT
Hfemin
120
Transistor Element Material
SILICON
Max Collector Current
150mA
Çalışma Sıcaklığı
150°C TJ
Emitter Base Voltage Vebo
6V
Max Power Dissipation
150mW
Montaj
Surface Mount
Operating Supply Voltage
50V
Transition Frequency
140MHz
Tepe Reflow Sıcaklığı (°C)
260
Polarity
PNP
Voltage Rated Dc
-50V

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