EMH75T2R

Specifications

Vce Saturation Max Ib Ic

150mV @ 500μA, 5mA

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Power Max

150mW

Current Collector Cutoff Max

500nA

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Resistor Base R1

4.7k Ω

Collector Emitter Voltage Vceo

150mV

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant

Resistor Emitter Base R2

47k Ω

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Transistor Type

2 NPN - Pre-Biased (Dual)

Max Collector Current

100mA

Transition Frequency

250MHz

Fabrika Tedarik Süresi

10 Weeks

Yayın Yılı

2016

Nem Hassasiyeti (MSL)

1 (Unlimited)

Frequency Transition

250MHz

Collectoremitter Breakdown Voltage

50V

Number Of Elements

2

Max Breakdown Voltage

50V

Max Power Dissipation

150mW

Terminal Sayısı

6

Kılıf / Paket

SOT-563, SOT-666

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Jesd30 Code

R-PDSO-F6

Polaritychannel Type

NPN

Montaj

Surface Mount

Ambalaj

Cut Tape (CT)

Transistor Application

SWITCHING

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 10