EMH60T2R

Specifications

Max Breakdown Voltage

50V

Max Power Dissipation

150mW

Terminal Sayısı

6

Kılıf / Paket

SOT-563, SOT-666

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Jesd30 Code

R-PDSO-F6

Polaritychannel Type

NPN

Montaj

Surface Mount

Ambalaj

Cut Tape (CT)

Transistor Application

SWITCHING

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 21

Frequency Transition

250MHz

Collectoremitter Breakdown Voltage

50V

Number Of Elements

2

Resistor Emitter Base R2

47k Ω

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Transistor Type

2 NPN - Pre-Biased (Dual)

Max Collector Current

100mA

Transition Frequency

250MHz

Fabrika Tedarik Süresi

10 Weeks

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

150mV @ 500μA, 5mA

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Power Max

150mW

Current Collector Cutoff Max

500nA

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Resistor Base R1

2.2k Ω

Collector Emitter Voltage Vceo

150mV

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant