EMH53T2R

Specifications

Configuration

Dual

Üretici Parça No

EMH53T2R

REACH Uyumluluk Kodu

compliant

Voltage Collector Emitter Breakdown Max

50V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Collector Cutoff Max

500nA (ICBO)

Montaj Stili

SMD/SMT

Resistor Base R1

4.7kOhms

Vce Saturation Max Ib Ic

150mV @ 500μA, 5mA

Tedarikçi Cihaz Paketi

EMT6

Emitter Base Voltage Vebo

5 V

Package Body Material

PLASTIC/EPOXY

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Package Style

SMALL OUTLINE

Ürün Durumu

Active

Power Dissipation

150mW

Collector Emitter Voltage Vceo Max

50 V

Transistor Polarity

Dual NPN

Msl

MSL 1 - Unlimited

Maximum Dc Collector Current

100 mA

RoHS

Details

Number Of Elements

2

Part Aliases

EMH53

Transistor Application

SWITCHING

Maximum Collector Emitter Voltage

50 V

Transition Frequencynom Ft

250 MHz

Jesd30 Code

R-PDSO-F6

Maximum Operating Frequency

250 MHz

Lifecycle Status

Production (Last Updated: 2 years ago)

Currentcollector Ic Max

100mA

Kılıf / Paket

SOT-563, SOT-666

Pd Power Dissipation

150 mW

Dc Current Gainmin Hfe

100

Continuous Collector Current

100mA

Typical Input Resistor

4.7 kOhms

Maks. Çalışma Sıcaklığı

+ 150 C

Number Of Elements Per Chip

2

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Fabrika Paket Adedi

8000