EMH10FHAT2R

Specifications

Fabrika Tedarik Süresi

13 Weeks

Transition Frequency

250MHz

Yüzey Montaj

YES

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Resistor Emitter Base R2

47k Ω

Transistor Type

2 NPN - Pre-Biased (Dual)

Yayın Yılı

2016

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Max

150mW

Parça Durumu

Active

Resistor Base R1

2.2k Ω

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

Dc Current Gain Hfe Min Ic Vce

80 @ 10mA 5V

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Currentcollector Ic Max

100mA

Kılıf / Paket

SOT-563, SOT-666

Terminal Sayısı

6

Transistor Application

SWITCHING

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 21

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Polaritychannel Type

NPN

Jesd30 Code

R-PDSO-F6

Ambalaj

Cut Tape (CT)

Collectoremitter Voltagemax

50V

Number Of Elements

2

Seri

Automotive, AEC-Q101

Frequency Transition

250MHz