EMF4T2R

Specifications

Transistor Element Material

SILICON

Risk Rank

5.84

JESD-609 Kodu

e2

Power Max

150mW

Number Of Terminals

6

Part Life Cycle Code

Obsolete

Power Dissipationmax Abs

0.15 W

Dc Current Gain Hfe Min Ic Vce

20 @ 20mA, 5V / 270 @ 10mA, 2V

Package Shape

RECTANGULAR

Yüzey Montaj

YES

ECCN Kodu

EAR99

Resistor Emitter Base R2

2.2kOhms

Transistor Type

1 NPN - Pre-Biased, 1 PNP

Collector Currentmax Ic

0.1 A

Collectoremitter Voltagemax

50 V

Rohs Code

Yes

HTS Kodu

8541.21.00.75

Frequency Transition

250MHz, 260MHz

Reflow Temperaturemax S

10

Additional Feature

BUILT IN BIAS RESISTOR RATIO 1

Terminal Kaplaması

TIN COPPER

Polaritychannel Type

NPN AND PNP

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Pin Sayısı

6

Package Description

SMALL OUTLINE, R-PDSO-F6

Ihs Manufacturer

ROHM CO LTD

Üretici Parça No

EMF4T2R

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

REACH Uyumluluk Kodu

compliant

Temel Ürün No

EMF4

Tepe Reflow Sıcaklığı (°C)

260

Voltage Collector Emitter Breakdown Max

50V, 12V

Current Collector Cutoff Max

500nA, 100nA (ICBO)

Resistor Base R1

2.2kOhms

Part Package Code

SC-107

Vce Saturation Max Ib Ic

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

Tedarikçi Cihaz Paketi

EMT6

Package Body Material

PLASTIC/EPOXY

Package Style

SMALL OUTLINE