EMD6FHAT2R

Specifications

Currentcollector Ic Max

100mA

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Current Collector Cutoff Max

500nA ICBO

Montaj Tipi

Surface Mount

Power Max

150mW

Fabrika Tedarik Süresi

13 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Voltage Collector Emitter Breakdown Max

50V

Frequency Transition

250MHz

Jesd30 Code

R-PDSO-F6

ECCN Kodu

EAR99

Yüzey Montaj

YES

Polaritychannel Type

NPN AND PNP

Terminal Formu

FLAT

Ambalaj

Cut Tape (CT)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2016

Resistor Base R1

4.7k Ω

Dc Current Gain Hfe Min Ic Vce

100 @ 1mA 5V

Seri

Automotive, AEC-Q101

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Number Of Elements

2

Kılıf / Paket

SOT-563, SOT-666

Transition Frequency

250MHz

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Terminal Sayısı

6

Transistor Application

SWITCHING