EMD22FHAT2R

Specifications

Terminal Formu

FLAT

Polaritychannel Type

NPN AND PNP

Jesd30 Code

R-PDSO-F6

ECCN Kodu

EAR99

Yüzey Montaj

YES

Frequency Transition

250MHz

Transistor Element Material

SILICON

Resistor Emitter Base R2

47k Ω

REACH Uyumluluk Kodu

not_compliant

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 10

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

13 Weeks

Power Max

150mW

Collectoremitter Voltagemax

50V

Currentcollector Ic Max

100mA

Power Dissipationmax Abs

0.15W

Montaj Tipi

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Terminal Sayısı

6

Transistor Application

SWITCHING

Transition Frequency

250MHz

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Kılıf / Paket

SOT-563, SOT-666

RoHS Durumu

ROHS3 Compliant

Number Of Elements

2

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

80 @ 10mA 5V

Parça Durumu

Active

Yayın Yılı

2016

Resistor Base R1

4.7k Ω

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED