EMB11FHAT2R

Specifications

Fabrika Tedarik Süresi

13 Weeks

Transition Frequency

250MHz

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PDSO-F6

Parça Durumu

Active

Kılıf / Paket

SOT-563, SOT-666

Frequency Transition

250MHz

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1.0

Number Of Elements

2

Polaritychannel Type

PNP

Terminal Formu

FLAT

Resistor Base R1

10k Ω

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA 5V

Transistor Application

SWITCHING

Collectoremitter Voltagemax

50V

Currentcollector Ic Max

100mA

Transistor Type

2 PNP - Pre-Biased (Dual)

Power Max

150mW

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2016

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Ambalaj

Cut Tape (CT)

Resistor Emitter Base R2

10k Ω

Seri

Automotive, AEC-Q101

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Montaj Tipi

Surface Mount