Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Parça Durumu
- Active
- Number Of Elements
- 2
- Terminal Pozisyonu
- DUAL
- Temel Parça No
- *M2
- Fet Feature
- Logic Level Gate
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 150mW
- Montaj
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 25pF @ 10V
- Çalışma Sıcaklığı
- 150°C TJ
- Rds On Max Id Vgs
- 1 Ω @ 200mA, 4V
- Kılıf / Paket
- SOT-563, SOT-666
- Fabrika Tedarik Süresi
- 16 Weeks
- Fet Type
- N and P-Channel
- Terminal Formu
- FLAT
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- Power Max
- 150mW
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Drain Currentmax Abs Id
- 0.2A
- Drainsource On Resistancemax
- 1.4Ohm
- ECCN Kodu
- EAR99
- Ds Breakdown Voltagemin
- 20V
- Drain To Source Voltage Vdss
- 20V
- Terminal Sayısı
- 6
- Vgsth Max Id
- 1V @ 1mA
- Pin Sayısı
- 6
- Tepe Reflow Süresi (maks. sn)
- 10
- Yayın Yılı
- 2009
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 6
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 200mA
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