Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 30V 20V
- Element Configuration
- Dual
- Terminal Sayısı
- 6
- Pin Sayısı
- 6
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Süresi (maks. sn)
- 10
- Yayın Yılı
- 2008
- Power Dissipation
- 150mW
- JESD-609 Kodu
- e2
- Pin Sayısı
- 6
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 200mA
- Transistor Application
- SWITCHING
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- TIN COPPER
- Gate Charge Qg Max Vgs
- 0.9nC @ 4.5V
- Kılıf / Paket
- SOT-563, SOT-666
- Fet Type
- N and P-Channel
- Transistor Element Material
- SILICON
- Terminal Formu
- FLAT
- Radyasyon Dayanımı
- No
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Drainsource On Resistancemax
- 8Ohm
- ECCN Kodu
- EAR99
- Drain Currentmax Abs Id
- 0.1A
- Max Power Dissipation
- 150mW
- Montaj
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Çalışma Sıcaklığı
- 150°C TJ
- Input Capacitance Ciss Max Vds
- 13pF @ 5V
- Rds On Max Id Vgs
- 8 Ω @ 10mA, 4V
- Current Continuous Drain Id25
- 100mA 200mA
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Breakdown Voltage
- 30V
- Parça Durumu
- Not For New Designs
- Number Of Elements
- 2
- Temel Parça No
- 6M1
- Fet Feature
- Logic Level Gate
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