Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Number Of Channels
- 2
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 2
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- 60V
- Fet Feature
- Logic Level Gate
- Temel Parça No
- *K31
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Max Power Dissipation
- 120mW
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 2.4 Ω @ 250mA, 10V
- Fall Time Typ
- 28 ns
- Input Capacitance Ciss Max Vds
- 15pF @ 25V
- Çalışma Sıcaklığı
- 150°C TJ
- Kılıf / Paket
- SOT-563, SOT-666
- Rise Time
- 5ns
- Terminal Kaplaması
- Tin/Copper (Sn/Cu)
- Terminal Formu
- FLAT
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 16 Weeks
- Fet Type
- 2 N-Channel (Dual)
- Radyasyon Dayanımı
- No
- Power Max
- 150mW
- ECCN Kodu
- EAR99
- Turn Off Delay Time
- 18 ns
- Terminal Sayısı
- 6
- Drain To Source Voltage Vdss
- 60V
- Turn On Delay Time
- 3.5 ns
- Vgsth Max Id
- 2.3V @ 1mA
- Pin Sayısı
- 6
- JESD-609 Kodu
- e2
- Pin Sayısı
- 6
- Yayın Yılı
- 2010
- Tepe Reflow Süresi (maks. sn)
- 10
- Ambalaj
- Tape & Reel (TR)
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