Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 10V
- Max Power Dissipation
- 150mW
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 1.2 Ω @ 200mA, 4.5V
- Fall Time Typ
- 17 ns
- Input Capacitance Ciss Max Vds
- 115pF @ 10V
- Çalışma Sıcaklığı
- 150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 2
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- -20V
- Fet Feature
- Logic Level Gate
- Temel Parça No
- *J1
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 6
- Drain To Source Voltage Vdss
- 20V
- Turn On Delay Time
- 6 ns
- Vgsth Max Id
- 1V @ 100μA
- Pin Sayısı
- 6
- JESD-609 Kodu
- e2
- Pin Sayısı
- 6
- Power Dissipation
- 150mW
- Yayın Yılı
- 2009
- Tepe Reflow Süresi (maks. sn)
- 10
- Ambalaj
- Tape & Reel (TR)
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 200mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- SOT-563, SOT-666
- Gate Charge Qg Max Vgs
- 1.4nC @ 4.5V
- Rise Time
- 4ns
- Terminal Kaplaması
- Tin/Copper (Sn/Cu)
- Terminal Formu
- FLAT
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 16 Weeks
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