Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- Module
- Fet Feature
- Silicon Carbide (SiC)
- ECCN Kodu
- EAR99
- Max Power Dissipation
- 880W
- Ds Breakdown Voltagemin
- 1200V
- Terminal Formu
- UNSPECIFIED
- Fet Type
- 2 N-Channel (Dual)
- Case Connection
- ISOLATED
- Çalışma Sıcaklığı
- 175°C TJ
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Fabrika Tedarik Süresi
- 25 Weeks
- REACH Uyumluluk Kodu
- not_compliant
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Bulk
- Input Capacitance Ciss Max Vds
- 900pF @ 10V
- Terminal Sayısı
- 10
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain Currentmax Abs Id
- 180A
- Vgsth Max Id
- 5.6V @ 50mA
- Transistor Application
- SWITCHING
- Parça Durumu
- Active
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Jesd30 Code
- R-XUFM-X10
- Current Continuous Drain Id25
- 180A Tc
- Terminal Pozisyonu
- UPPER
- Montaj Tipi
- Surface Mount
- Yüzey Montaj
- NO
- Pulsed Drain Currentmax Idm
- 360A
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drain To Source Voltage Vdss
- 1200V 1.2kV
- Number Of Elements
- 2
- Configuration
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
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