Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2012
- Terminal Formu
- UNSPECIFIED
- Gate To Source Voltage Vgs
- 22V
- Kılıf / Paket
- Module
- Fet Feature
- Silicon Carbide (SiC)
- Max Power Dissipation
- 1.13kW
- Number Of Channels
- 1
- Nominal Vgs
- 2.7 V
- Reach Svhc
- No SVHC
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Bulk
- Montaj
- Screw
- Yükseklik
- 21.1mm
- Input Capacitance Ciss Max Vds
- 23000pF @ 10V
- Fet Type
- 2 N-Channel (Half Bridge)
- Power Max
- 1130W
- Case Connection
- ISOLATED
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Fabrika Tedarik Süresi
- 25 Weeks
- Continuous Drain Current Id
- 180A
- REACH Uyumluluk Kodu
- not_compliant
- Genişlik
- 45.6mm
- Threshold Voltage
- 2.7V
- Vgsth Max Id
- 4V @ 35.2mA
- Uzunluk
- 122mm
- Transistor Application
- SWITCHING
- Parça Durumu
- Active
- Terminal Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 10
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 360A
- Number Of Elements
- 2
- Drain To Source Voltage Vdss
- 1200V 1.2kV
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Configuration
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Current Continuous Drain Id25
- 204A Tc
- Jesd30 Code
- R-XUFM-X8
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