BSM120D12P2C005

Specifications

Case Connection

ISOLATED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-40°C~150°C TJ

Fet Type

2 N-Channel (Half Bridge)

Genişlik

45.6mm

Threshold Voltage

2.7V

Fabrika Tedarik Süresi

25 Weeks

Continuous Drain Current Id

120A

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Yükseklik

21.1mm

Montaj

Screw

Input Capacitance Ciss Max Vds

14000pF @ 10V

Ambalaj

Bulk

Kılıf / Paket

Module

Fet Feature

Silicon Carbide (SiC)

Gate To Source Voltage Vgs

22V

Reach Svhc

Unknown

Nominal Vgs

2.7 V

Number Of Channels

1

Max Power Dissipation

780W

Yayın Yılı

2013

Terminal Formu

UNSPECIFIED

Terminal Pozisyonu

UPPER

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

120A Tc

Jesd30 Code

R-XUFM-X8

Pulsed Drain Currentmax Idm

240A

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Drain To Source Voltage Vdss

1200V 1.2kV

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pin Sayısı

10

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

8

Transistor Application

SWITCHING

Uzunluk

122mm

Vgsth Max Id

2.7V @ 22mA

Parça Durumu

Active