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C3 ChipZentronix
BR25L160FVT-WE2

ROHM Semiconductor

BR25L160FVT-WE2

Memory

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Compliant

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Specifications

Fonksiyon Sayısı
1
Besleme Gerilimi
1.8V~5.5V
Maks. Oturma Yüksekliği
1.25mm
Kurşunsuz Kodu
yes
Memory Types
Non-Volatile
Terminal Adımı
0.65mm
Yayın Yılı
2005
Contact Plating
Tin
Write Cycle Timemax Twc
5ms
Terminal Sayısı
8
Pin Sayısı
8
Memory Width
8
Memory Format
EEPROM
Besleme Gerilimi
2.5V
Endurance
1000000 Write/Erase Cycles
Tepe Reflow Sıcaklığı (°C)
260
Ambalaj
Tape & Reel (TR)
Nem Hassasiyeti (MSL)
1 (Unlimited)
Clock Frequency
5MHz
Write Cycle Time Word Page
5ms
Pin Sayısı
8
Operating Supply Voltage
5V
Density
16 kb
Data Retention Timemin
40
Kılıf / Paket
8-TSSOP (0.173, 4.40mm Width)
Kurşunsuz
Lead Free
JESD-609 Kodu
e2
Interface
SPI, Serial
Access Time
70 ns
Standby Currentmax
0.000002A
Memory Size
16Kb 2K x 8
Serial Bus Type
SPI
Çalışma Sıcaklığı
-40°C~85°C TA
Radyasyon Dayanımı
No
Temel Parça No
BR25L160
Tepe Reflow Süresi (maks. sn)
10
ECCN Kodu
EAR99
Write Protection
HARDWARE/SOFTWARE
Terminal Pozisyonu
DUAL
Genişlik
3mm

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