Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 1000 @ 350mA 2V
- Kılıf / Paket
- 16-SOIC (0.173, 4.40mm Width)
- Vce Saturation Max Ib Ic
- 1.6V @ 500μA, 350mA
- Max Breakdown Voltage
- 60V
- Yayın Yılı
- 2014
- Pin Sayısı
- 16
- Power Max
- 620mW
- RoHS Durumu
- ROHS3 Compliant
- Fabrika Tedarik Süresi
- 10 Weeks
- Max Power Dissipation
- 620mW
- Montaj
- Surface Mount
- Max Collector Current
- 500mA
- Transistor Type
- 7 NPN Darlington
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- -40°C~85°C TA
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Collector Emitter Voltage Vceo
- 1.6V
- ECCN Kodu
- EAR99
- Parça Durumu
- Obsolete
- Ambalaj
- Cut Tape (CT)
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 60V
Related Products
Echelon Corporation
15400R-57B
Arrays BJT Transistors
Echelon Corporation
15401R-47BP
Arrays BJT Transistors
Echelon Corporation
15402R-47B
Arrays BJT Transistors
Central Semiconductor Corp
2N2060
Arrays BJT Transistors
Central Semiconductor Corp
2N2060A
Arrays BJT Transistors
Microsemi Corporation
2N2060L
Arrays BJT Transistors
Central Semiconductor Corp
2N2060M
Arrays BJT Transistors
Seme LAB
2N2223
Arrays BJT Transistors