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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 200
- Frequency Transition
- 114MHz 142MHz
- Emitter Base Voltage Vebo
- 7V
- Jesd30 Code
- R-PDSO-G6
- Transition Frequency
- 114MHz
- Yüzey Montaj
- YES
- Collectoremitter Breakdown Voltage
- 50V
- Akım Değeri
- 200mA
- Lifecycle Status
- OBSOLETE (Last Updated: 4 days ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Max
- 250mW
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Yayın Yılı
- 2007
- Terminal Kaplaması
- TIN LEAD
- Pin Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Qualification Status
- COMMERCIAL
- Power Dissipation
- 187mW
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 6V
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e0
- Collector Base Voltage Vcbo
- 60V
- Terminal Sayısı
- 6
- Vce Saturation Max Ib Ic
- 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
- Tepe Reflow Süresi (maks. sn)
- 30
- Kurşunsuz
- Contains Lead
- Collectoremitter Saturation Voltage
- 250mV
- ECCN Kodu
- EAR99
- Max Power Dissipation
- 250mW
- REACH Uyumluluk Kodu
- unknown
- Currentcollector Ic Max
- 200mA
- Voltage Collector Emitter Breakdown Max
- 50V
- Parça Durumu
- Obsolete
- Transistor Type
- NPN, PNP
- Tepe Reflow Sıcaklığı (°C)
- 240
- Transistor Element Material
- SILICON
- Temel Parça No
- UMZ1N
- Polaritychannel Type
- NPN AND PNP
- RoHS Durumu
- Non-RoHS Compliant
- Montaj Tipi
- Surface Mount
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