Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 30nC @ 10V
- Current Continuous Drain Id25
- 6A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 32m Ω @ 6A, 10V
- Transistor Application
- SWITCHING
- Jesd30 Code
- R-PDSO-G8
- Yüzey Montaj
- YES
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e0
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 20V
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Qualification Status
- COMMERCIAL
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 30V
- Drain To Source Breakdown Voltage
- 30V
- Avalanche Energy Rating Eas
- 325 mJ
- Number Of Elements
- 2
- Power Max
- 1.29W
- Power Dissipation
- 2W
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 8
- Max Power Dissipation
- 2W
- Rise Time
- 22ns
- Terminal Sayısı
- 8
- Ds Breakdown Voltagemin
- 30V
- Tepe Reflow Sıcaklığı (°C)
- 240
- REACH Uyumluluk Kodu
- unknown
- Fall Time Typ
- 45 ns
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.032Ohm
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.5V @ 250μA
- Terminal Formu
- GULL WING
- Fet Feature
- Logic Level Gate
- Tepe Reflow Süresi (maks. sn)
- 30
- Akım Değeri
- 6A
- RoHS Durumu
- Non-RoHS Compliant
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