NTMD6N03R2

Specifications

Gate Charge Qg Max Vgs

30nC @ 10V

Current Continuous Drain Id25

6A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rds On Max Id Vgs

32m Ω @ 6A, 10V

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-G8

Yüzey Montaj

YES

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e0

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Qualification Status

COMMERCIAL

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

Drain To Source Breakdown Voltage

30V

Avalanche Energy Rating Eas

325 mJ

Number Of Elements

2

Power Max

1.29W

Power Dissipation

2W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Montaj Tipi

Surface Mount

Pin Sayısı

8

Max Power Dissipation

2W

Rise Time

22ns

Terminal Sayısı

8

Ds Breakdown Voltagemin

30V

Tepe Reflow Sıcaklığı (°C)

240

REACH Uyumluluk Kodu

unknown

Fall Time Typ

45 ns

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.032Ohm

Montaj

Surface Mount

Vgsth Max Id

2.5V @ 250μA

Terminal Formu

GULL WING

Fet Feature

Logic Level Gate

Tepe Reflow Süresi (maks. sn)

30

Akım Değeri

6A

RoHS Durumu

Non-RoHS Compliant