Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- ULTRA-LOW RESISTANCE
- JESD-609 Kodu
- e0
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.215Ohm
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Drain To Source Voltage Vdss
- 80V
- Transistor Element Material
- SILICON
- Vgsth Max Id
- 3V @ 250μA
- Qualification Status
- COMMERCIAL
- Fet Feature
- Logic Level Gate
- Terminal Formu
- GULL WING
- RoHS Durumu
- Non-RoHS Compliant
- Pulsed Drain Currentmax Idm
- 25A
- Tepe Reflow Süresi (maks. sn)
- 30
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Current Continuous Drain Id25
- 2.3A
- Gate Charge Qg Max Vgs
- 15nC @ 10V
- Pin Sayısı
- 8
- Rds On Max Id Vgs
- 215m Ω @ 2.5A, 10V
- Jesd30 Code
- R-PDSO-G8
- Transistor Application
- SWITCHING
- Ds Breakdown Voltagemin
- 80V
- Terminal Sayısı
- 8
- Yüzey Montaj
- YES
- Tepe Reflow Sıcaklığı (°C)
- 240
- Operating Mode
- ENHANCEMENT MODE
- Power Max
- 3.1W
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Obsolete
- Kurşunsuz Kodu
- no
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance Ciss Max Vds
- 480pF @ 25V
- Terminal Kaplaması
- TIN LEAD
- Montaj Tipi
- Surface Mount
- Avalanche Energy Rating Eas
- 25 mJ
- Fet Type
- 2 N-Channel (Dual)
- Drain Currentmax Abs Id
- 2.3A
- Number Of Elements
- 1
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