NTLGD3502NT1G

Specifications

Rds On Max Id Vgs

60m Ω @ 4.3A, 4.5V

Drain Currentmax Abs Id

4.3A

Parça Durumu

Obsolete

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz

Lead Free

Power Dissipation

1.74W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 day ago)

Ambalaj

Tape & Reel (TR)

Pulsed Drain Currentmax Idm

17.2A

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

20V

Jesd30 Code

S-PDSO-N6

Case Connection

DRAIN

Turn Off Delay Time

8.6 ns

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

480pF @ 10V

Qualification Status

COMMERCIAL

Fet Type

2 N-Channel (Dual)

Fall Time Typ

17.5 ns

Number Of Elements

2

Max Power Dissipation

1.74W

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

MATTE TIN

Pin Sayısı

6

Gate Charge Qg Max Vgs

4nC @ 4.5V

Pin Sayısı

6

Power Max

1.74W

Drainsource On Resistancemax

0.06Ohm

Fet Feature

Logic Level Gate

Transistor Element Material

SILICON

Continuous Drain Current Id

3.6A

HTS Kodu

8541.29.00.95

Configuration

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Süresi (maks. sn)

40

Ds Breakdown Voltagemin

20V

Vgsth Max Id

2V @ 250μA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

4.3A 3.6A

Operating Mode

ENHANCEMENT MODE