Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 7.4nC @ 4.5V
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 1.1W
- Temel Parça No
- NTHD5903
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Power Max
- 1.1W
- Number Of Elements
- 2
- Terminal Sayısı
- 8
- Voltage Rated Dc
- -20V
- Uzunluk
- 6.35mm
- Vgsth Max Id
- 600mV @ 250μA
- Lifecycle Status
- OBSOLETE (Last Updated: 1 week ago)
- Fet Feature
- Logic Level Gate
- Drainsource On Resistancemax
- 0.155Ohm
- Rise Time
- 35ns
- Kurşunsuz
- Lead Free
- Drain To Source Voltage Vdss
- 20V
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Kılıf / Paket
- 8-SMD, Flat Lead
- Qualification Status
- COMMERCIAL
- Tepe Reflow Sıcaklığı (°C)
- 260
- Pin Sayısı
- 8
- Kurşunsuz Kodu
- no
- Power Dissipation
- 1.1W
- Tepe Reflow Süresi (maks. sn)
- 40
- Rds On Max Id Vgs
- 155m Ω @ 2.2A, 4.5V
- Drain To Source Breakdown Voltage
- -20V
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Genişlik
- 6.35mm
- Ambalaj
- Tape & Reel (TR)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2005
- Transistor Application
- SWITCHING
- Terminal Formu
- C BEND
- Operating Mode
- ENHANCEMENT MODE
- Jesd30 Code
- R-XDSO-C8
- RoHS Durumu
- ROHS3 Compliant
- Yükseklik
- 6.35mm
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