NSBC114YPDXV6T1

Specifications

Power Dissipation

357mW

Min. Çalışma Sıcaklığı

-55°C

Polarity

PNP

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 4.7

Terminal Kaplaması

MATTE TIN

Voltage Collector Emitter Breakdown Max

50V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Kılıf / Paket

SOT-563, SOT-666

Jesd30 Code

R-PDSO-F6

Akım Değeri

100mA

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

6

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

Power Max

500mW

Parça Durumu

Obsolete

Collector Emitter Voltage Vceo

250mV

Montaj Tipi

Surface Mount

REACH Uyumluluk Kodu

unknown

Max Collector Current

100mA

ECCN Kodu

EAR99

Montaj

Surface Mount

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

40

Polaritychannel Type

NPN AND PNP

Continuous Collector Current

100mA

Temel Parça No

NSBC1*

Max Power Dissipation

500mW

Terminal Formu

FLAT

Hfemin

80

Currentcollector Ic Max

100mA

Element Configuration

Dual

RoHS Durumu

ROHS3 Compliant

Resistor Base R1

10k Ω

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)