Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 357mW
- Polarity
- PNP
- Min. Çalışma Sıcaklığı
- -55°C
- Vce Saturation Max Ib Ic
- 250mV @ 300μA, 10mA
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 5mA 10V
- Terminal Kaplaması
- TIN
- Additional Feature
- BUILT IN BIAS RESISTOR RATIO IS 0.047
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Voltage Collector Emitter Breakdown Max
- 50V
- Kılıf / Paket
- SOT-563, SOT-666
- Jesd30 Code
- R-PDSO-F6
- Akım Değeri
- -100mA
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 6
- Power Max
- 500mW
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Surface Mount
- Collector Emitter Voltage Vceo
- 250mV
- Parça Durumu
- Obsolete
- Max Collector Current
- 100mA
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Kurşunsuz
- Lead Free
- Montaj
- Surface Mount
- Temel Parça No
- NSBA1*
- Continuous Collector Current
- -100mA
- Polaritychannel Type
- PNP
- Terminal Formu
- FLAT
- Max Power Dissipation
- 500mW
- Element Configuration
- Dual
- Currentcollector Ic Max
- 100mA
- Hfemin
- 80
- Pin Sayısı
- 6
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tape & Reel (TR)
- Resistor Base R1
- 2.2k Ω
- Maks. Çalışma Sıcaklığı
- 150°C
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
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