NSBA114YDXV6T1

Specifications

Temel Parça No

NSBA1*

Polaritychannel Type

PNP

Continuous Collector Current

-100mA

Tepe Reflow Süresi (maks. sn)

40

Montaj

Surface Mount

Kurşunsuz

Contains Lead

ECCN Kodu

EAR99

Max Collector Current

100mA

Ambalaj

Tape & Reel (TR)

Resistor Base R1

10k Ω

RoHS Durumu

ROHS3 Compliant

Element Configuration

Dual

Currentcollector Ic Max

100mA

Hfemin

80

Terminal Formu

FLAT

Max Power Dissipation

500mW

Voltage Rated Dc

-50V

Qualification Status

COMMERCIAL

Current Collector Cutoff Max

500nA

Yayın Yılı

2009

Transistor Type

2 PNP - Pre-Biased (Dual)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maks. Çalışma Sıcaklığı

150°C

JESD-609 Kodu

e3

Resistor Emitter Base R2

47k Ω

Yüzey Montaj

YES

Collectoremitter Breakdown Voltage

50V

Pin Sayısı

6

Number Of Elements

2

Polarity

PNP

Min. Çalışma Sıcaklığı

-55°C

Power Dissipation

357mW

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Voltage Collector Emitter Breakdown Max

50V

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 0.21

Terminal Kaplaması

MATTE TIN

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Tepe Reflow Sıcaklığı (°C)

260

Transistor Element Material

SILICON